서울대학교 플라즈마응용연구실Seoul National University Plasma Application Laboratory

A model predictive controller (MPC) that controls the fluorine density to a constant level in the etching process plasma was developed. In SF₆/O₂/Ar etch plasma, an algorithm was developed to maintain the F radical density at a constant level by controlling the amount of oxygen inflow. In the development of the controller, the gain of control model was designed from the particle balance equation, and the time constants were designed in consideration of the dynamic characteristics of equipment parts. The performance of the controller algorithm is evaluated through a set-point tracking test. It is expected that this will be an element technology of an automated process controller that actively controls disturbances during the etching process.